1 PNA3202 silicon pin photodiodes for optical information systems pin photodiodes absolute maximum ratings (ta = 25?c) parameter symbol ratings unit reverse voltage (dc) v r 30 v power dissipation p d 30 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c dimensions of detection area 2-0.5 0.1 unit : mm 1: common cathode 2: anode 5.0 0.1 5.3 max. 1.8 0.3 1.0 0.2 0.6 4.0 0.1 1.8 0.3 1.0 ?.2,dep.0.1 4.3 max. 1.0 12 2.54 0.1 10? 5? 10? 5? 10? 10? +0.1 ?.05 0.2 2.0 2.3 2.3 2.0 unit : mm electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i d v r = 10v 1 10 na photo current i l v r = 10v, l = 1000 lx *1 40 m a peak sensitivity wavelength l p v r = 10v 900 nm response time t r , t f *2 v r = 10v, r l = 50 w 30 ns capacitance between pins c t v r = 10v, f = 1mhz 10 pf acceptance half angle q measured from the optical axis to the half power point 65 deg. photo sensitivity s v r = 10v, l = 800nm 0.50 0.55 0.60 a/w *1 white tungsten lamp light source (color temperature t = 2856k) *2 semiconductor laser light source ( l = 800nm ) features fast response : t r , t f = 30 ns (typ.) good photo current linearity low dark current : i d = 10 na (max.) wide spectral sensitivity
2 PNA3202 pin photodiodes v r = 10v i d ?ta ambient temperature ta (?c ) dark current i d (na) ?40 20 60 100 ?20 04080 10 ? 10 ? 1 10 i l ?ta 160 120 80 40 ambient temperature ta (?c ) relative photo current i l (%) ?20 0 20 60 80 40 100 0 ?40 v r = 10v l = 1000 lx t = 2856k c t ?v r 10 3 10 2 10 1 reverse voltage v r (v) capacitance between pins c t (pf) 11010 2 10 ? 10 ? p d ?ta power dissipation p d (mw) 40 30 20 10 ambient temperature ta (?c ) 0 20406080100 0 ?30 i l ?l 10 3 10 2 10 1 illuminance l (lx) photo current i l ( a) 10 2 10 3 10 4 10 ? 10 v r = 10v ta = 25?c t = 2856k i d ?v r 1 10 ? reverse voltage v r (v) ta = 25?c dark current i d (na) 032 81624 10 ? spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 v r = 10v ta = 25?c f = 1mhz ta = 25?c directivity characteristics 100 80 60 40 20 0 80 40 0 40 80 angle q (deg.) relative sensitivity s (%) v r = 10v ta = 25?c 10 ? t r , t f ?r l 10 3 10 2 10 10 2 10 3 1 external load resistance r l ( ) rise time, fall time t r , t f (ns) 10 1 10% 90% t d t r t f r l v r = 10v sig. out 50 sig.in
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